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Elastic properties of indium tin oxide films

Identifieur interne : 011446 ( Main/Repository ); précédent : 011445; suivant : 011447

Elastic properties of indium tin oxide films

Auteurs : RBID : Pascal:02-0142029

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Couche mince, Indium oxyde, Etain oxyde, Constante élasticité, Méthode mesure, Méthode optique, Diffusion lumière, Effet Brillouin, Diffusion Rayleigh, Dispersion phonon, 6860B, 8170F, In O Sn.

English descriptors

KwdEn :
- Brillouin effect, Elastic constants, Experimental study, Indium oxides, Light scattering, Measuring methods, Optical method, Phonon dispersion, Rayleigh scattering, Thin films, Tin oxides.

Abstract

The Brillouin light scattering (BLS) technique is used to observe thermally excited acoustic surface phonons in backscattering geometry. A series of DC sputtered ITO films with thicknesses ranging from 31 to 3600 nm were deposited at a substrate temperature of 150°C on hydrogen terminated (100) silicon. From the dispersion of the Rayleigh mode and of the higher order Rayleigh-like modes in the discrete part of the spectrum, three independent stiffness constants, c₁₁, c₃₃ and c₅₅, are determined with reasonable accuracy. These results are obtained using a hexagonal model, which takes the axial symmetry of the film material into account. The elastic anisotropy, c₁₁/c₃₃ ≃ 5/4, is attributed to the single crystal anisotropy of the strongly textured ITO. The Young's moduli obtained from BLS and a microindentation analysis are in good agreement.

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Pascal:02-0142029

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<author><name sortKey="Jorzick, J" uniqKey="Jorzick J">J. Jorzick</name>
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<author><name sortKey="Seitz, H" uniqKey="Seitz H">H. Seitz</name>
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<author><name sortKey="Jung, K" uniqKey="Jung K">K. Jung</name>
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<author><name sortKey="Hillebrands, B" uniqKey="Hillebrands B">B. Hillebrands</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Brillouin effect</term>
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<term>Experimental study</term>
<term>Indium oxides</term>
<term>Light scattering</term>
<term>Measuring methods</term>
<term>Optical method</term>
<term>Phonon dispersion</term>
<term>Rayleigh scattering</term>
<term>Thin films</term>
<term>Tin oxides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Couche mince</term>
<term>Indium oxyde</term>
<term>Etain oxyde</term>
<term>Constante élasticité</term>
<term>Méthode mesure</term>
<term>Méthode optique</term>
<term>Diffusion lumière</term>
<term>Effet Brillouin</term>
<term>Diffusion Rayleigh</term>
<term>Dispersion phonon</term>
<term>6860B</term>
<term>8170F</term>
<term>In O Sn</term>
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<front><div type="abstract" xml:lang="en">The Brillouin light scattering (BLS) technique is used to observe thermally excited acoustic surface phonons in backscattering geometry. A series of DC sputtered ITO films with thicknesses ranging from 31 to 3600 nm were deposited at a substrate temperature of 150°C on hydrogen terminated (100) silicon. From the dispersion of the Rayleigh mode and of the higher order Rayleigh-like modes in the discrete part of the spectrum, three independent stiffness constants, c<sub>11</sub>
, c<sub>33</sub>
 and c<sub>55</sub>
, are determined with reasonable accuracy. These results are obtained using a hexagonal model, which takes the axial symmetry of the film material into account. The elastic anisotropy, c<sub>11</sub>
/c<sub>33</sub>
 ≃ 5/4, is attributed to the single crystal anisotropy of the strongly textured ITO. The Young's moduli obtained from BLS and a microindentation analysis are in good agreement.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Elastic properties of indium tin oxide films</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 28th International Conference on Metallurgical Coatings and Thin Films, San Diego, California, April 30-May 4 2001</s1>
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<fA11 i1="01" i2="1"><s1>WITTKOWSKI (T.)</s1>
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<fC01 i1="01" l="ENG"><s0>The Brillouin light scattering (BLS) technique is used to observe thermally excited acoustic surface phonons in backscattering geometry. A series of DC sputtered ITO films with thicknesses ranging from 31 to 3600 nm were deposited at a substrate temperature of 150°C on hydrogen terminated (100) silicon. From the dispersion of the Rayleigh mode and of the higher order Rayleigh-like modes in the discrete part of the spectrum, three independent stiffness constants, c<sub>11</sub>
, c<sub>33</sub>
 and c<sub>55</sub>
, are determined with reasonable accuracy. These results are obtained using a hexagonal model, which takes the axial symmetry of the film material into account. The elastic anisotropy, c<sub>11</sub>
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<s2>28</s2>
<s3>San Diego, California USA</s3>
<s4>2001-04-30</s4>
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Elastic properties of indium tin oxide films

Elastic properties of indium tin oxide films

Descripteurs français

English descriptors

Abstract

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